PART |
Description |
Maker |
MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
TSHG5510 |
High Speed Infrared Emitting Diode
|
Vishay Siliconix
|
VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm 2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix VISHAY SEMICONDUCTORS
|
VSMF2893GX01 |
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMB2948SL |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
TSFF5510 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
VSMB3940X01 |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHG541009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHG6200 TSHG620007 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHG6200 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Intertechnology,Inc.
|